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采用真空蒸镀法分别在 K9和 Si(100)基片上制备 Be 薄膜,在相同沉积速率下,K9基片上 Be 薄膜生长形态和 Si 基片上 Be 薄膜生长形态存在差异.但是两者随沉积速率增加具有相似的演变规律,即由等轴晶变化至纤维晶,再至粗大等轴晶.XRD 和 XPS 分析结果表明:不同基片和蒸发温度下制备的 Be 薄膜均主要由 HCP 结构的α-Be 相组成,且表面存在一定氧化;对于非晶 K9基片,Be 薄膜晶粒取向较单一,(101)始终为显露晶面;而单晶 Si(100)基片上 Be 晶粒取向多样,在一定沉积速率下显露特定晶面;相同沉积时间下 K9和 Si(100)基体上生长的 Be 薄膜粗糙度 Rq 变化趋势十分相似,两者随 Be 薄膜沉积速率(v)增加先急剧增大后趋于平缓;以细小等轴晶生长的薄膜表面光洁度较高,而以纤维晶或粗大混晶生长的薄膜表面粗糙度较大.“,”Be films grown on K9 and Si(100) substrates were fabricated by an evaporation deposition method. At the same deposition velocity, the growth morphology of Be films grown on the K9 substrate is different from that grown on the Si(100) substrate. Whereas, both of them have the similar evolution rule with the increase of deposition velocity, which changes from an equiaxed grain to a fiber grain, and then to a coarsening equiaxed grain. XRD and XPS analyses indicate that the Be films grown on different substrates at different deposition velocities consist mainly of HCP structureα-Be phase, and all of the Be film surface is oxidized. For the amorphous K9 substrate, the preferential growth orientation of Be film is always exposed to (101) crystal face. While, the grain orientation of the Si substrate is diversiform, a special crystal face can be shown at a certain deposition velocity. For the Be films grown on K9 substrate and Si(100) substrate, their variation trend of roughness Rq is similar at the same deposition time. Both of them increase sharply with the increase of deposition velocity, and then enhance slightly. The Be films with an equiaxed grain is very smooth, while the surface roughness of the fiber grain and coarsening mixed grain is very large.