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采用离子束溅射的方法制备了一系列不同原子比的FexSn1 0 0 x合金颗粒膜 ,系统地研究了该体系的反常霍耳效应 .在该薄膜中发现了铁磁金属 非磁金属体系中最大的霍耳电阻率 ,讨论了不同原子配比、薄膜厚度对霍耳效应的影响 .通过研究饱和霍耳电阻率 ρxys同电阻率 ρxx的关系 ,讨论了反常霍耳效应的机理 .
A series of FexSn1 0 0 alloy films with different atomic ratios were prepared by ion beam sputtering and the anomalous Hall effect of the system was investigated systematically.The largest The effects of different atomic ratio and film thickness on the Hall effect were discussed.The mechanism of the anomalous Hall effect was discussed by studying the relationship between the saturation Hall resistivity ρxys and the resistivity ρxx.