论文部分内容阅读
以离子背散射和二次离子质谱分析了大剂量N~+离子注入A1形成的A1/A1N/A1多层结构。基于离子注入形成A1N埋层的机理,利用计算机程序动态模拟A1N层的形成过程及终态结构。研究发现,N/A1原子比饱和于A1N化学组分比,模拟与实验结果符合得很好;低能注入能降低形成A1N层的临界剂量,且A1/A1N界面更陡。
The A1 / A1N / A1 multilayer structure formed by high dose N + ion implantation A1 was analyzed by ion backscattering and secondary ion mass spectrometry. Based on the mechanism of AlN buried layer formation by ion implantation, the formation process and final structure of A1N layer were simulated by computer program. The results show that the N / A1 atomic ratio is saturated with A1N chemical composition, and the simulation and experimental results are in good agreement. Low energy injection can reduce the critical dose of forming A1N layer and the interface of A1 / A1N is steeper.