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AlInGaAs/AlGaAs strained single quantum well lasers with an emission wavelength of 810nm were fabricated by molecular beam epitaxy (MBE). The threshold current density is 375A/cm2 for broad-area lasers(100×800μm2), and it decreases to 270A/cm2 when the cavity length extends to 1600μm, which is the best result in quaternary AlInGaAs/AlGaAs strained quantum well lasers for the as-grown wafer by MBE. An external differential quantum efficiency of 1.1W/A(72%) and a narrow transverse beam divergence of 34° are obtained for the uncoated lasers.
AlInGaAs / AlGaAs strained single quantum well lasers with an emission wavelength of 810 nm were fabricated by molecular beam epitaxy (MBE). The threshold current density was 375 A / cm 2 for broad-area lasers (100 × 800 μm 2), and it decreased to 270 A / cm 2 when the cavity length extends to 1600 μm, which is the best result in quaternary AlInGaAs / AlGaAs strained quantum wells lasers for the as-grown wafer by MBE. An external differential quantum efficiency of 1.1 W / A (72%) and a narrow transverse beam divergence of 34 ° are obtained for the uncoated lasers.