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利用超高真空扫描隧道显微镜研究了室温至610℃的条件下锰在Si(111)-7×7表面的反应生长情况,制备出了锰纳米团簇和几种锰硅化物。实验结果表明:温度低于260℃时,生成了占据在衬底7×7结构亚单胞上大小统一的锰纳米团簇;温度高于500℃时,生成的锰硅化物可分为三类:纳米线、平板状的岛和三维不规则的岛。除此以外,390℃至610℃锰硅化物岛的成核密度符合传统成核理论。
The reaction growth of manganese on the surface of Si (111) -7 × 7 at room temperature up to 610 ℃ was investigated by using ultra-high vacuum scanning tunneling microscopy. Manganese nanoclusters and several manganese silicides were prepared. The experimental results show that when the temperature is lower than 260 ℃, Mn nanoclusters occupying uniform size on the 7 × 7 subunits of the substrate are formed. When the temperature is higher than 500 ℃, the Mn silicides can be divided into three types : Nanowires, flat islands and three-dimensional irregular islands. In addition, the nucleation density of Mn silicide islands at 390 ° C to 610 ° C conforms to the traditional nucleation theory.