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介绍了绿色、红色发光GaP外延晶片不同发光强度的无损检测方法。分别用短紫外光 (≤300nm ) 和蓝光 (488nm ) 激发方式, 在室温下, 有效地观测了LEDGaPvN (掺氮GaP晶片) 的多峰PL谱。根据对上述两种发光GaP外延晶片的相对光强与金属杂质Fe、Cu、Ni和Cr (以Fe 为主) 紫外荧光 (UVF) 谱的实测数据的相关性, 讨论了LEDGaP外延晶片的工艺质量优化和洁净度的问题
The non-destructive testing methods of different luminous intensities of green and red light-emitting GaP epitaxial wafers are introduced. The multimodal PL spectra of LEDGaPvN (nitrogen-doped GaP wafers) were effectively observed at room temperature with short UV (≤300nm) and blue (488nm) excitation respectively. Based on the correlation between the relative intensities of the two GaP epitaxial wafers and the UV-fluorescence spectra of Fe, Cu, Ni and Cr (mainly Fe), the effects of the LEDGaP epitaxial wafer Process quality optimization and cleanliness issues