介绍了绿色、红色发光ＧａＰ外延晶片不同发光强度的无损检测方法。分别用短紫外光 （≤３００ｎｍ ） 和蓝光 （４８８ｎｍ ） 激发方式， 在室温下， 有效地观测了ＬＥＤＧａＰｖＮ （掺氮ＧａＰ晶片） 的多峰ＰＬ谱。根据对上述两种发光ＧａＰ外延晶片的相对光强与金属杂质Ｆｅ、Ｃｕ、Ｎｉ和Ｃｒ （以Ｆｅ 为主） 紫外荧光 （ＵＶＦ） 谱的实测数据的相关性， 讨论了ＬＥＤＧａＰ外延晶片的工艺质量优化和洁净度的问题 The non-destructive testing methods of different luminous intensities of green and red light-emitting GaP epitaxial wafers are introduced. The multimodal PL spectra of LEDGaPvN (nitrogen-doped GaP wafers) were effectively observed at room temperature with short UV (≤300nm) and blue (488nm) excitation respectively. Based on the correlation between the relative intensities of the two GaP epitaxial wafers and the UV-fluorescence spectra of Fe, Cu, Ni and Cr (mainly Fe), the effects of the LEDGaP epitaxial wafer Process quality optimization and cleanliness issues