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采用射频溅射,在 Ba_(0.65)Sr_(0.35)TiO_3(BST)薄膜和 Pt/Ti/SiO_2/Si 衬底之间制备10 nm 的 Ba_(0.65)Ru_(0.35)RuO_3(BSR)缓冲层,研究了 BSR 缓冲层对 BST 薄膜结构和性能的影响。与没有 BSR 缓冲层的 BST 薄膜相比,BSR 缓冲层可使 BST 薄膜呈高度 a 轴择优取向生长,改善了薄膜的介电常数,降低了薄膜的漏电流密度,使其热释电系数达到7.45×10~(-7)C cm~(-2)K~(-1)。表明利用 BSR 缓冲层可以制备高热释电性能的 BST 薄膜。
A 10 nm Ba_ (0.65) Ru_ (0.35) RuO_3 (BSR) buffer layer was prepared between the Ba_ (0.65) Sr_ (0.35) TiO_3 (BST) thin film and the Pt / Ti / SiO_2 / Si substrate by RF sputtering. The effect of BSR buffer layer on the structure and performance of BST thin films was investigated. Compared with the non-BSR buffer layer, the BSR buffer layer can grow the BST film in a highly a-axis preferred orientation, improve the dielectric constant of the thin film and reduce the leakage current density of the thin film to a value of 7.45 × 10 ~ (-7) C cm ~ (-2) K ~ (-1). It shows that the BST film with high pyroelectric performance can be prepared by using BSR buffer layer.