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研究了1 064 nm Hf O2/Si O2偏振分光膜中节瘤的损伤特性。为了研究偏振分光膜中节瘤缺陷种子源粒径大小与损伤阈值之间的关系,在熔石英基板上植入了尺寸和密度可控的单分散性的Si O2小球,并采用电子束蒸发技术在熔石英基板上制备了1 064 nm Hf O2/Si O2偏振分光膜。为了便于损伤测试,节瘤缺陷密度控制在20~40 mm2左右,并采取旋涂的措施防止了Si O2小球团聚的现象。为了获得人工节瘤损伤能量的统计值,用脉宽为10 ns的1 064 nm脉冲激光进行了光栅扫描式损伤测试。实验结果表明在偏振分光膜中节瘤缺陷的损伤阈值随着种子源粒径的增大而单调下降。
The damage characteristics of oncolytic tumor in 1 064 nm Hf O2 / Si O2 polarization splitting film were studied. In order to study the relationship between the size of seed-source defects and the threshold of damage in PBS, a monodispersed Si O2 pellet with controlled size and density was implanted on the fused silica substrate, and electron beam evaporation Technology 1 064 nm Hf O2 / Si O2 polarization splitting film was prepared on fused silica substrate. In order to facilitate the damage test, the nodal defect density is controlled at about 20-40 mm2, and spin-coating is adopted to prevent the aggregation of Si O2 pellets. In order to obtain the statistical value of the damage energy of the articular nodules, a raster scan damage test was performed using a 1064 nm pulsed laser with a pulse width of 10 ns. The experimental results show that the damage threshold of the nodule defects decreases monotonously with the increase of seed size.