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双轴应变技术被证实是一种能同时提高电子和空穴迁移率的颇有前景的方法;〈100〉沟道方向能有效地提升空穴迁移率.研究了在双轴应变和〈100〉沟道方向的共同作用下的空穴迁移率.双轴应变通过外延生长弛豫SiGe缓冲层来引入,其中,弛豫SiGe缓冲层作为外延底板,对淀积在其上的硅帽层形成拉伸应力.沟道方向的改变通过在版图上45°旋转器件来实现,这种旋转使得沟道方向在(001)表面硅片上从〈110〉晶向变成了〈100〉晶向.对比同是〈110〉沟道的应变硅pMOS和体硅pMOS,迁移率增益达到了130%;此外,在相同的应变硅pMOS中,沟道方向从〈110〉到〈100〉的改变使空穴迁移率最大值提升了30%.讨论和分析了这种双轴应变和沟道方向改变的共同作用下迁移率增强的机理.
Biaxial strain technology has proven to be a promising method that can simultaneously increase the mobility of electrons and holes; the <100> channel orientation can effectively enhance the hole mobility. The biaxial strain and <100> Channel mobility. The biaxial strain is introduced by epitaxial growth of a relaxed SiGe buffer layer, in which a relaxed SiGe buffer layer acts as an epitaxial backplane, pulling the silicon cap layer deposited thereon Tensile stress The change in channel orientation is achieved by rotating the device at 45 ° on the layout that causes the channel orientation to change from <110> to <100> orientation on (001) surface silicon. In addition, in the same strained silicon pMOS, the channel orientation changed from <110> to <100> to increase the hole mobility in the same strained silicon pMOS as that of the <110> channel strained silicon pMOS and bulk silicon pMOS, The maximum mobility increased by 30% .This mechanism of enhanced mobility under the combined effect of biaxial strain and channel orientation change was discussed and analyzed.