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针对InGaAs/GaAsP/AlGaAs应变补偿量子阱非对称宽波导结构进行了实验研究。利用不同腔长,100μm发光区,500μm周期的管芯测量了外延片的内量子效率和内损耗,其分别为83.81%和0.698 2 cm-1;采用C-mount标准封装,腔长为1.5 mm的单管测量了阈值电流和微分量子效率的特征温度,其分别为299和1 278 K;采用填充因子为74%,高纯度In焊料烧结,标准热沉封装制备了列阵激光器,比较了三种不同腔长的器件的P-I特性。最终确定腔长为1.5 mm,当工作电流为230 A时,二极管列阵激光器最大连续输出功率为204 W,电光转换效率为52%。
The asymmetric wide waveguide structure of InGaAs / GaAsP / AlGaAs strain compensated quantum wells has been studied experimentally. The internal quantum efficiency and internal loss of the epitaxial wafers were measured with different cavity length, 100μm luminescence region and 500μm period die, which were 83.81% and 0.698 2 cm-1, respectively. The C-mount standard package had a cavity length of 1.5 mm The single-tube characteristics of threshold current and differential quantum efficiency were measured at 299 and 1 278 K, respectively. An array laser was fabricated using a high-purity In solder with a fill factor of 74% and a standard heat sink package. PI characteristics of different cavity lengths. Finally, the cavity length is 1.5 mm. When the operating current is 230 A, the maximum continuous output power of the diode array laser is 204 W and the electro-optical conversion efficiency is 52%.