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由于半导体微制造技术的不断革新,集成电路(IC)密度在过去15年里已取得了惊人的发展。其实际效益是每单元电路功能的成本一直在持续下降(图1),从而使计算机,电视通讯和消费类电器在近几年得到有目共睹的飞速发展。 将集成电路图形刻印在硅片上的微细光刻技术是半导体微制造技术发展的核心,自70年代初以来,微细光刻技术的研究已使图形线宽形成能力从7微米减至1微米。 随着器件设计、生产工程师所进行的“缩减”(例如:减小现存电路设计的面积或用新器件设计增加电路功能),一个硅片上的芯片数及每个硅片的价值也随之增加。器件物理学推测:器件的线宽极限接近0.5微米。目前,
Due to the continuous innovations in semiconductor micro-fabrication technology, the density of integrated circuits (ICs) has achieved phenomenal growth over the past 15 years. The real benefit is that the cost per unit of circuit functionality has been declining continuously (Figure 1), resulting in the rapid development of computers, televisions and consumer appliances that have seen remarkable growth in recent years. Micro-lithography, which is the process of engraving IC graphics on silicon, is central to the development of semiconductor micro-fabrication technology. Since the early 1970s, research into microlithography has reduced the linewidth capability of the graphics from 7 to 1 micron. As device designers and manufacturing engineers “shrink” (for example, reducing the area of existing circuit designs or adding circuit features with new device designs), the number of chips on a silicon chip and the value of each silicon chip follow increase. Device physics speculates that the device’s line width limit is close to 0.5 microns. Currently,