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新型不挥发非破坏性读出铁电存储器金属 /铁电 /半导体器件结构中 ,存在着铁电薄膜与半导体衬底之间相互扩散、离子陷阱密度高、铁电薄膜难于直接淀积在硅衬底上、电荷注入等问题 ,因此在铁电薄膜与半导体之间增加一层合适的介质材料作为阻挡层是制备不挥发非破坏性读出铁电存储器的关键。文中研究了运用 SOL- GEL方法制备 Zr O2 介质层的方法 ,并且对制备的介质层的成份、结构、电特性进行了分析 ,为研制 MFIS作了准备。
New non-volatile non-destructive read Ferroelectric memory metal / ferroelectric / semiconductor device structure, there is a mutual proliferation between the ferroelectric thin film and the semiconductor substrate, the ion trap density is high, the ferroelectric thin film is difficult to deposit directly on the silicon liner The bottom, charge injection and other issues, so in the ferroelectric thin film and the semiconductor to add a layer of suitable dielectric material as a barrier layer is non-volatile non-destructive read Ferroelectric memory key. In this paper, the method of preparing ZrO2 dielectric layer by SOL-GEL method is studied, and the composition, structure and electrical properties of the prepared dielectric layer are analyzed and prepared for the preparation of MFIS.