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LSI/VLSI中使用的单晶硅材料是由杂质含量在10~(-12)cm~(-3)以下的电子纯硅材料制备的,不仅纯度高,而且结构要完整。实际使用的单晶硅片不同于理想晶体,例如,硅片表面的原子结构具有不完整的价键,晶体内部也必然会存在不完整的结构(缺陷、位错等),这对器件或电路的性能有很大影响。因此,在制备单晶时必须严格加以控制。由于硅材料的某些特性以及硅器件的工艺特性与硅的晶向有关,因此,将单晶硅切割成大
The single crystal silicon material used in LSI / VLSI is made of electron pure silicon material with impurity content less than 10 ~ (-12) cm ~ (-3), which not only has high purity but also has perfect structure. The actual use of monocrystalline silicon wafer is different from the ideal crystal, for example, the atomic structure of the silicon surface has incomplete valence bonds, the crystal will inevitably have incomplete internal structure (defects, dislocations, etc.), which pairs of devices or circuits The performance has a big impact. Therefore, the preparation of single crystals must be strictly controlled. Due to certain characteristics of the silicon material and the process characteristics of the silicon device are related to the orientation of the silicon, the single crystal silicon is cut into large