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采用化学气相沉积(CVD)法,以铜箔为衬底,以甲烷为碳源,制备了石墨烯薄膜和单晶畴,并利用扫描电子显微镜、光学显微镜、喇曼光谱仪、紫外-可见透过光谱仪等手段对石墨烯进行了系统表征。结果表明,质量分数为10%的稀硝酸对铜箔表面进行腐蚀处理20s可以有效去除铜箔表面析出的杂质颗粒,从而提高石墨烯的质量。在此基础上,研究了氢气和甲烷体积流量比对石墨烯生长的影响,当氢气和甲烷体积流量比从0∶1变化到5∶1时,石墨烯薄膜从单层生长变化到多层生长。此外,氢气和甲烷体积流量比也会显著影响晶畴的形状,随着氢气和甲烷体积流量比的增加,石墨烯晶畴从无规则形状逐渐变化到六边形。
The graphene films and single crystal domains were prepared by chemical vapor deposition (CVD) method using copper foil as substrate and methane as carbon source. Scanning electron microscopy, optical microscopy, Raman spectroscopy and UV-Vis Spectrometer and other means of graphene were systematically characterized. The results showed that the corrosion of copper foil by dilute nitric acid with mass fraction of 10% for 20s can effectively remove the impurity particles precipitated on the surface of copper foil and improve the quality of graphene. Based on this, the effect of volumetric flow ratio of hydrogen and methane on the growth of graphene was studied. When the volume flow ratio of hydrogen to methane was changed from 0: 1 to 5: 1, the graphene films changed from monolayer growth to multilayer growth . In addition, the volumetric flow ratio of hydrogen to methane also significantly affects the shape of the domains. As the volume flow ratio of hydrogen to methane increases, the graphene domains gradually change from a random shape to a hexagonal shape.