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Surface passivation performances of Al_2O_3 layers deposited on p-type Czochralski Si wafers by atomic layer deposition(ALD) were investigated as a function of post-deposition annealing conditions.The maximal minority carrier lifetime of ~4.7 ms was obtained for AI_2O_3 passivated p-type Si.Surface passivation mechanisms of Al_2O_3 layers were investigated in terms of interfacial state density(D_(it)) and negative fixed charge densities(Q_(fix)) through capacitance—voltage(C— V) characterization.High density of Q_(fix) and low density of D_(it) were needed for high passivation performances,while high density of D_(it) and low density of Q_(fix)degraded the passivation performances.A low D_(it) was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al_2O_3 layer.
Surface passivation performances of Al 2 O 3 deposited on p-type Czochralski Si wafers by atomic layer deposition (ALD) were investigated as a function of post-deposition annealing conditions. The maximal minority carrier lifetime of ~ 4.7 ms was obtained for AI 2 O 3 passivated p-type Si. Surface passivation mechanisms of Al 2 O 3 layers were investigated in terms of interfacial state density (D_ (it)) and negative fixed charge densities (Q_ (fix)) through capacitance-voltage ) and low density of D_ (it) were needed for high passivation performances, while high density of D_ (it) and low density of Q_ (fix) degraded the passivation performances.A low D_ (it) was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al 2 O 3 layer.