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Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMTs) grown by Metal Organic ChemicalVapor Deposition (MOCVD) on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length depletion-mode mHEMTs with maximum transconductance up to 613mS/mm are achieved. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.
Metamorphic Al0.50In0.50As / Ga0.47In0.53As high electron mobility transistors (mHEMTs) grown by Metal Organic Chemical Vapor Deposition (MOCVD) on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme with been fabricated for the first The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 36.9 and 55.6 GHz, respectively. respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are the initial results tabling to the manufacturing potential of integrated high -speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.