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将涂有光致抗蚀剂的硅片或其它光敏材料置于由多束相干光以某种方式组合构成的干涉场中,可以在大视场和深曝光场内形成孔、点或锥阵周期图形,光学系统简单廉价,不需掩模和高精度大NA光刻物镜,采用现行抗蚀剂工艺。文中介绍的双光束双曝光法得到的阵列图形周期d的极限为dm i n=λ/2,四光束单曝光的周期略大,为前者的2倍,三光束单曝光得到2/3 d周期的图形,并且图形不受基片在曝光场中位置的影响,适合大面积尺寸器件中周期图形的制作,而三光束双曝光和五光束曝光的结果是周期为2d的阵列图形,并且沿光轴方向光场随空间位置也作周期变化,适合在大纵深尺寸范围内调制物体结构。
Placing a photoresist-coated silicon wafer or other photosensitive material in an interference field composed of a combination of multiple coherent light beams in some fashion can result in the formation of holes, dots or cone-shaped periodic patterns in large field and deep exposure fields The optical system is simple and inexpensive, does not require masks and high-precision large NA lithography objective, using the current resist process. The limit of the period d of the array pattern d obtained by the double beam double exposure method described in the article is dm in = λ / 2. The period of the single exposure of the four beams is slightly larger, which is twice of that of the former. The single exposure of the three beams takes 2/3 d cycles Graphics and the graphics are not affected by the substrate position in the exposure field, suitable for large-size devices in the cycle of the production of graphics, and three-beam double exposure and five-beam exposure results are 2d period array pattern, and along the optical axis The directional light field also varies periodically with the position of the space, and is suitable for modulating the object structure in a large depth of field.