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Laser-induced diffusion is employed to dope indium (In) into sputtering-deposited cadmium sulfide (CdS) thin films.The increased optical band gap energy from 2.52 to 2.60 eV with maintenance of high optical transmittance about 60nm in the 200-nm-thick films,the enhanced mobility over 42.5 cm2 /V.s,and the decreased resistivity to 1.42 × 10-3 Ω·cm are successfully obtained to be advantageous for a window layer in solar cells.