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本文简述了晶体管作开关运用时集电结由反偏状态向正偏状态转化的物理本质。在动态过程的分析中引入了非中性多子和非中性少子的新提法。得出如下结论:1.只要PN结两侧出现非中性多子(即户区出现呈现非中性状态的空穴,N区出现呈现非中性状态的电子)PN结就必然由宽变窄。反之,如PN结两侧出现非中性少子则PN结就必然由窄变宽。2.P区和N区的电中性状态是PN结宽度的稳定条件。
This article briefly describes the physical nature of the collector junction transition from reverse bias state to positive bias state when the transistor is used as a switch. In the analysis of dynamic process, we introduce the new formulation of non-neutral multi-sub and non-neutral sub-sub. The conclusions are as follows: 1. As long as non-neutral multi-subunits appear on both sides of the PN junction (ie, holes in non-neutral state occur in the household area, electrons in non-neutral state appear in N area) narrow. Conversely, if there is a non-neutral PN junction on both sides of the PN junction will inevitably be narrowed widening. 2.P and N area of the electrical neutral state is the PN junction width stability conditions.