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为了提高北京HI-13串列加速器束流的硅中射程和LET值,本文开展了高电荷态束流引出技术及pA级弱束流诊断技术研究。采用电刚度和磁刚度模拟技术,配合pA级弱束流束斑观测和束流强度监测技术,获得能量360MeV、峰总比80%的197 Au离子束流,其在Si中的表面LET为86.1MeV·cm2·mg-1、射程为30.1μm,满足单粒子效应(SEE)实验的要求,拓展了北京HI-13串列加速器上单粒子效应实验所用离子的能量和LET值范围。
In order to improve the range and LET of silicon in the HI-13 tandem accelerator beam in Beijing, a high-charge state beam extraction technique and a pA class weak beam flow diagnosis technique are studied in this paper. The electric field stiffness and magnetic stiffness simulation technique were used together with pA class weak beam spot observation and beam intensity monitoring technology to obtain 197 Au ion beam with 360MeV energy and 80% peak ratio. The surface LET in Si was 86.1MeV · Cm2 · mg-1 with a range of 30.1μm, which meets the requirements of the single-particle effect (SEE) experiment and extends the energy and LET range of the ions used in the single-particle effect experiment on the Beijing HI-13 Tandem Accelerator.