设计了一种基于SOI衬底且由新型磁敏晶体管组成的磁敏测量电路。理论分析了n+-π-n+晶体管基区长度大于载流子有效扩散长度Leff时的磁灵敏度。该磁敏晶体管可应用于磁场的测量,实验结果表明在磁场B=0.1T时,这种新型结构给出高的磁灵敏度即△Ic/Ic0≈20%,并且有很好的电控制特性。该磁敏晶体管的槽形复合区采用MEMS技术制造。 A novel magnetic sensing circuit based on SOI substrate and a novel magneto-sensitive transistor is designed. The magnetic sensitivity of the n + -π-n + transistor with base length greater than the effective diffusion length of the carrier Leff is theoretically analyzed. The magneto-sensitive transistor can be applied to the measurement of magnetic field. The experimental results show that the new structure gives a high magnetic sensitivity, ie, ΔIc / Ic0≈20% at a magnetic field of B = 0.1T, and has good electrical control characteristics. The slotted recombination region of the magneto transistor is fabricated using MEMS technology.