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就多晶硅接触薄发射极和金属接触薄发射极两种发射极对晶闸管薄发射区体压降Ｖ＿（ｂＥ）的影响进行了分析比较，结果表明：多晶硅接触薄发射极结构由于改善了接触处的界面状况，且由于多晶硅层对少子运动的障碍作用，使薄发射区内有效少子寿命大大提高，从而使Ｖ＿（ｂＥ）降至最小以致可忽略不计，这已为实验结果所证实。分析还表明：多晶硅的少子寿命是保证上述效果的关键参数。
The influence of two kinds of emitter polycrystalline silicon thin emitter and metal thin emitter on the body pressure drop V bE of thyristor thin emitter is analyzed and compared. The results show that the contact structure Interface condition, and due to the barrier effect of the polysilicon layer on the motion of the minority carriers, the effective minority carrier lifetime in the thin emission region is greatly increased, so that V bE is negligible. This is confirmed by the experimental results. The analysis also shows that the low lifetime of polysilicon is the key parameter to ensure the above effect.