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The compressive creep behavior at 1?200 ~ 1?400?℃ of an in situ synthesized MoSi 2 30%SiC (volume fraction) composite and a traditional PM MoSi 2 30%SiC (volume fraction) composite is investigated. The creep rate of the in situ synthesized MoSi 2 30%SiC (volume fraction) composite is about 10 -7 s -1 under stress of 60 ~ 120?MPa, and significantly lower than that made by PM method above 1?300?℃. The reason is that the interface between SiC particle and MoSi 2 matrix in in situ synthesized SiC p/MoSi 2 is of direct atomic bonding without any amorphous glassy phase, such as SiO 2 structure. Creep deformation occurs primarily by dislocation motion and the dislocations have Burgers vectors of the type of <110> and <100>.
The compressive creep behavior at 1? 200? 1? 400? C of an in situ synthesized MoSi 2 30% SiC (volume fraction) composite and a traditional PM MoSi 2 30% SiC the in situ synthesized MoSi 2 30% SiC (volume fraction) composite is about 10 -7 s -1 under stress of 60~120 MPa, and significantly lower than that made by PM method above 1~300 ° C. The reason is that the interface between SiC particle and MoSi 2 matrix in situ synthesized SiC p / MoSi 2 is of direct atomic bonding without any amorphous glassy phase, such as SiO 2 structure. Creepvolution of claim by by dislocation motion and the dislocations have Burgers vectors of the type of <110> and <100>.