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高压绝缘栅双极晶体管(IGBT)存在寄生晶闸管,易发生闩锁失效。对p~+深阱的参数进行了优化,制备了3 300 V p~+深阱平面栅非穿通IGBT(NPT-IGBT)。对NPT-IGBT的静态特性进行了仿真,结果表明,当p~+结深约为5.5μm,p~+深阱距离多晶硅5μm时,p~+深阱并未影响到沟道处p阱掺杂浓度,对IGBT静态特性无明显影响。制备了不同p~+深阱注入剂量的IGBT芯片,并将芯片封装为模块,分别进行常温和高温下的静态和动态参数测试。测试结果表明,当p~+深阱剂量低时,常温下模块关断失效;而p~+深阱剂量增大时可通过常温、高温开关测试,并通过10μs短路测试。p~+深阱注入剂量对静态特性无明显影响,对动态特性改善明显,可满足应用要求。
High-voltage insulated gate bipolar transistor (IGBT) parasitic thyristors exist, prone to latch failure. The parameters of the p ~ + deep well were optimized and a 3 300 V p ~ + deep well planar gate non-through IGBT (NPT-IGBT) was fabricated. The static characteristics of the NPT-IGBT are simulated. The results show that the p ~ + deep well has no effect on the p-well doping at the channel when the p ~ + junction depth is about 5.5μm and the p ~ + deep well is 5μm away from the polysilicon Miscellaneous concentration, no significant effect on the static characteristics of IGBT. Prepared different p ~ + deep well injection dose of IGBT chip, and the chip package as a module, respectively, at room temperature and high temperature static and dynamic parameters of the test. The test results show that when the dose of p ~ + deep well is low, the module shutdown fails at room temperature; while the p ~ + deep well dose increases, it can pass the normal temperature and high temperature switch test and pass the short circuit test of 10μs. p ~ + deep well injection dose has no significant effect on the static characteristics of the dynamic characteristics of significantly improved to meet the application requirements.