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IBM日前宣布推出第四代硅锗制造 技术,其性能可达到上一代技术的2倍 以上。这种全新的130 nm硅锗双极互 补金属氧化半导体(SiGe BiCMOS)制 造技术可以降低移动消费类电子产品的 成本,推动高带宽无线通信的发展,并 可以应用在汽车雷达等创新应用上。 与此同时,IBM还推出了一种专为 支持无线应用而设计的低成本版本,这 一版本可延长电池工作时间,并增加了 移动手持设备的功能,便于推广无线局 域网和全球卫星定位技术(GPS)的应用。
IBM announced the fourth generation of silicon germanium manufacturing technology, its performance up to 2 times more than the previous generation technology. The new 130 nm SiGe BiCMOS manufacturing technology can reduce the cost of mobile consumer electronics products, drive the development of high-bandwidth wireless communications and can be used in innovative applications such as automotive radar. In the meantime, IBM has introduced a low-cost version designed specifically for wireless applications that extends battery life and adds the power of a mobile handset for easy wireless LAN and global satellite positioning ( GPS) application.