论文部分内容阅读
采用具有不同体积百分数N_2气的Ar溅射气体作磁控溅射,可获得SiC膜沉积层。研究了沉积膜的化学组分、质量和导电性能,结果为沉积膜的硬度随N_2气量增加急剧下降,N_2/Ar的体积分数为30～40％时,硬度达到Hk1300稳定值。沉积膜随N_2气量增加,呈晶脆结构。仅用Ar气沉积的SiC膜,硅和碳含量分别为55和45％(克分子数)。随N_2气量增加,这些值随之降低,而膜中氮含量增加。若N_2/Ar体积百分数为30％,则膜中硅、碳和氮达到稳定,分别为30、20和50％(克分子数)。X射线衍射分析表明,所
Using Ar sputtering gas with different volume percentages of N 2 gas for magnetron sputtering, a SiC film deposition layer can be obtained. The chemical composition, mass and electrical conductivity of the deposited films were studied. The results showed that the hardness of the deposited film decreased sharply with the increase of N 2 gas volume, and reached the Hk1300 stability value when the volume fraction of N 2 / Ar was 30-40%. Deposition film increases with N 2 gas volume, showing a crystal-brittle structure. The SiC film deposited with only Ar gas has a silicon and carbon content of 55 and 45% (moles), respectively. As N 2 gas increases, these values decrease, while the nitrogen content in the membrane increases. If the N_2 / Ar volume fraction is 30%, the silicon, carbon and nitrogen in the film are stable at 30, 20 and 50% (moles), respectively. X-ray diffraction analysis showed that