多晶硅膜内应力的存在影响传感器的性能.本文介绍了内应力的SEM测定法和减小应力的途径.1 多晶硅微结构多晶硅膜采用LPCVD方法淀积,淀积温度为650℃,低压约为133Pa,微结构如图1所示.改变多晶硅微结构的长、宽及膜的厚度,得到不同的微结构.供SEM观察用,具体尺寸见表1. The existence of stress in the polysilicon film affects the performance of the sensor.In this paper, the SEM measurement of internal stress and the way to reduce the stress are introduced.1 The polycrystalline silicon polysilicon film is deposited by LPCVD, the deposition temperature is 650 ℃, the low pressure is about 133Pa , The microstructure shown in Figure 1. Change the length and width of the polysilicon microstructure and the thickness of the film to obtain different microstructures for SEM observation, the specific size in Table 1.