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本文综合评述了用射频等离子体化学气相沉积（ＲＦ－ＰＥＣＶＤ）法制备类金刚石碳膜过程中的等离子体化学反应和等离子体与材料表面反应机理的研究概况。着重介绍射频ＣＨ＿４等离子体中，各种离子和中性基因的产生和传输机理，以及等离子体与材料表面反应的动力学基本理论。
This review summarizes the research progress of plasma chemical reactions and the reaction mechanism of plasma and material surface during the preparation of diamond-like carbon films by radio-frequency plasma chemical vapor deposition (RF-PECVD). It mainly introduces the generation and transport mechanism of various ions and neutral genes in radio frequency CH_4 plasma as well as the basic theory of kinetics of the reaction between plasma and material surface.