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在等离子体增强化学气相沉积(PECVD)系统中,利用逐层淀积非晶硅(a-Si)和等离子体氧化相结合的方法制备二氧化硅(SiO2)介质层.电容电压(C-V)和电导电压(G-V)测量结果表明:利用该方法在低温(250℃)条件下制备的SiO2介质层均匀致密,其固定氧化物电荷和界面态密度分别为9×1011cm-2和2×1011cm-2.eV-1,击穿场强达4.6MV/cm,与热氧化形成的SiO2介质层的性质相当.将该SiO2介质层作为控制氧化层应用在双势垒纳米硅(nc-Si)浮栅存储结构中,通过调节控制氧化层的厚度,有效阻止栅电极与nc-Si之间的电荷交换,延长存储时间,使存储性能得到明显改善.
In plasma enhanced chemical vapor deposition (PECVD) systems, a silicon dioxide (SiO2) dielectric layer is prepared by a combination of a-Si and plasma oxidation. The capacitance voltage (CV) and The measurement results of GV show that the SiO2 layer prepared at low temperature (250 ℃) has a uniform and uniform density with a fixed oxide charge and interface density of 9 × 1011cm-2 and 2 × 1011cm-2, respectively .eV-1, breakdown field strength of 4.6MV / cm, and thermal oxidation of the formation of SiO2 dielectric layer properties of the SiO2 dielectric layer is used as a control oxide layer in the double-barrier nanocrystalline silicon (nc-Si) floating gate In the memory structure, by adjusting and controlling the thickness of the oxide layer, the charge exchange between the gate electrode and nc-Si can be effectively prevented, the storage time can be prolonged, and the storage performance can be remarkably improved.