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由于在大面积玻璃基底上制备由多层材料构成的高质量薄膜晶体管象元驱动阵列工艺的复杂性,使有源矩阵液晶显示器（AMLCD）的成品率低、价格高。利用激光对AMLCD进行非晶硅薄膜的退火和电路缺陷的修复,可有效的改善AMLCD的性能,提高成品率和降低成本。本文在介绍了激光对非晶硅薄膜退火和电路缺陷修复常用激光器的特性后,讨论了激光对不同类型缺陷修复的原理和过程。最后,分析比较了不同类型激光退火方法的特点。
Due to the complexity of fabricating a high quality thin film transistor pixel driving array on a large area glass substrate made of a multilayer material, the active matrix liquid crystal display (AMLCD) has a low yield and a high price. AMLCD laser annealing of amorphous silicon thin films and repair of circuit defects can effectively improve the performance of AMLCD, improve the yield and reduce the cost. This paper introduces the characteristics of lasers commonly used in the annealing of a-Si films and circuit defects, and discusses the principle and process of laser repair of different types of defects. Finally, the characteristics of different types of laser annealing methods are analyzed and compared.