论文部分内容阅读
用分子束外延生长Al_xGa_(1-x)As/GaAs调制掺杂结构。范德堡法、光荧光谱和电化学C—V等方法测量了电学和光学特性。连续波电光检测证明材料有较好的均匀性。用该结构材料制作的HEMT器件在12GHz下,噪声系数0.76dB,相关增益6.5dB。
Al_xGa_ (1-x) As / GaAs is used to modulate the doping structure by molecular beam epitaxy. Van der Waal method, fluorescence spectroscopy and electrochemical C-V and other methods to measure the electrical and optical properties. Continuous wave electro-optic test to prove the material has better uniformity. The HEMT device fabricated with this material has a noise figure of 0.76 dB and a gain of 6.5 dB at 12 GHz.