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设计、制作并测试了用于电容型压力传感器的一种集成电路。使用的是利用标准双极IC工艺而不需要任何特殊元件和修整技术的高精度紧凑微功率电路。这是通过分析施密特触发振荡器和带隙电压基准这两种关键电路的性能限制而成功的。传感器电路在3.5V下的功耗为200μW,可分辨出300ppm的电容变化,在有限的温度范围内测量温度的精度为±0.1℃,目前在一块2mm×6mm可植入的单片硅压力传感器上的占用面积为4mm~2。文章对传感器的进一步按比例缩小进行了讨论,表明面积还可以缩小四分之三。
An integrated circuit for capacitive pressure sensors was designed, fabricated and tested. Using a high-precision compact micro-power circuit that uses a standard bipolar IC process without the need for any special components and trimming techniques. This is done by analyzing the performance limitations of the two key circuits, the Schmitt trigger oscillator and the bandgap voltage reference. The sensor circuit consumes 200μW at 3.5V, resolves a 300ppm change in capacitance, and measures temperature accuracy within ± 0.1 ° C over a limited temperature range. Currently, a 2mm × 6mm implantable monolithic silicon pressure sensor On the occupied area of 4mm ~ 2. The article discusses the further scaling down of the sensor, indicating that the area can be reduced by as much as three quarters.