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基于弛豫锗硅衬底上生长双轴应变硅技术、离子注入工艺以及选择性腐蚀方法,制备了8英寸(1英寸=2.54 cm)双轴张应变的绝缘体上应变硅(sSOI)材料。利用喇曼光谱分析、缺陷优先腐蚀以及透射电子显微镜(TEM)等方法表征了sSOI材料的应变度、缺陷密度以及晶体质量;制备了基于sSOI材料的n型金属-氧化层-半导体场效晶体管(n-MOSFET)以表征其电学性能,同时在相同工艺下制备了基于SOI材料的n-MOSFET器件作对比。结果表明,制备的sSOI材料顶层应变硅薄膜的应变为1.01%,并且在800℃热处理后仍能保持;应变硅薄膜厚度为18 nm,缺陷密度为4.0×104cm-2,具有较高的晶体质量;制备的sSOI n-MOSFET器件的开关电流比(Ion/Ioff)达到108,亚阈值斜率为69.31 mV/dec,相比SOI n-MOSFET,其驱动电流提高了10倍。
An 8-inch (1 inch = 2.54 cm) biaxial tensile strain insulator-on-silicon (SOI) material was fabricated based on biaxial strained silicon grown on a relaxed SiGe substrate, ion implantation and selective etching. The strain, defect density and crystal quality of sSOI material were characterized by Raman spectroscopy, defect preferential etching and transmission electron microscopy (TEM). The fabrication of n-type metal-oxide-semiconductor field effect transistor n-MOSFET) to characterize its electrical performance, while comparing the n-MOSFET devices based on SOI materials prepared under the same process. The results show that the strain of the top strain silicon thin film of the prepared sSOI material is 1.01% and can be maintained after the heat treatment at 800 ℃. The thickness of the strained silicon film is 18 nm, the defect density is 4.0 × 104cm-2, and has a high crystal quality ; The switching current ratio (Ion / Ioff) of the fabricated sSOI n-MOSFET device reaches 108 and the subthreshold slope is 69.31 mV / dec, which increases the driving current ten times higher than that of the SOI n-MOSFET.