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本报导表明了,在许多半导体样品中用频闪扫描电镜观察“陷阱”的定域分布和它们的瞬时CL的可能性。 这种扫描电镜工作方式的特点是,采用脉冲扫描的电子束,从用光学的CL信号同时形成的图像中分离出局部过程的所需要的相位。在文献[1.2]中已解决了在半导体电子学中应用频闪扫描电镜的另外一些课题。 用阴极荧光的频闪电镜方法,可以揭示样品中的CL相对于激发滞后了的那些区域。根据滞后时间增加时图像反差的变化,可以确定从该样品局部发出的CL辐射“延迟”的时间。
This report shows the possibility of observing the localized distribution of “traps” and their instantaneous CL by stroboscopic scanning electron microscopy in many semiconductor samples. The hallmark of this scanning electron microscope is the use of pulsed electron beam to separate the desired phase of the local process from the simultaneous image formed by the optical CL signal. In [1.2], some other applications of stroboscopic SEM in semiconductor electronics have been solved. Using a cathodic fluorescence stroboscopic method, it is possible to reveal those areas in the sample where CL is delayed relative to the excitation. Depending on the change in image contrast as the hysteresis increases, the time to “delay” the CL radiation emitted locally from the sample can be determined.