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本文观察和测量了Si_3N_4和SiO_xN_y薄膜在俄歇电子谱(AES)分析中的电子束和离子束效应。结果表明在高束流密度电子束辐照下没有观察到任何损伤特征峰。延长辐照时间仅导致氧的解吸和Si、N讯号增加,最后达到一个稳定态。Si_3N_4和SiO_xN_y对离子辐照很容易造成损伤。但在高束流密度的电子束辐照下离子损伤的表面可以恢复。恢复程度与电子束流密度、束能、辐照时间和样品制备工艺有关。最后,本文对离子辐照损伤和恢复的机理进行了讨论。
In this paper, the electron beam and ion beam effects of Si_3N_4 and SiO_xN_y films in Auger electron spectroscopy (AES) analysis were observed and measured. The results show that no damage peak is observed under high beam density electron beam irradiation. Prolonging the irradiation time leads to the desorption of oxygen and the increase of Si and N signals, finally reaching a steady state. Si_3N_4 and SiO_xN_y are easily damaged by ionizing radiation. However, the ion damaged surface can be recovered under high beam density electron beam irradiation. The degree of recovery is related to electron beam current density, beam energy, irradiation time and sample preparation process. Finally, the mechanism of ionizing radiation damage and recovery is discussed in this paper.