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报道了一种用于在高剂量辐照条件下 MOS器件抗辐照电路模拟的半经验模型 .利用该模型对 MOS器件实验结果进行了模拟 ,模型计算结果与实验吻合较好 .初步分析了高剂量条件下不同散射机制对模拟结果的影响 ,结果表明界面电荷的库仑散射是引起电子迁移率退化的主要机制
A semi-empirical model for the simulation of anti-radiation circuits of MOS devices under high dose irradiation was reported. The experimental results of MOS devices were simulated by using the model, and the calculated results are in good agreement with the experimental results. The effect of different scattering mechanisms on the simulation results under the condition of dose shows that the coulomb scattering of interface charges is the main mechanism of the degeneration of electron mobility