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由于缺乏合适的衬底,从而限制了GaN器件的开发和商品化。而现在美国Technologies and Devices International(TDI)公司已开发出首块族氮化物器件用的4英寸直径AlN基半绝缘衬底。这种新产品用于超高速功率AlGaN/GaN器件的衬底。这些器件包括HEMT和用于下一代无线通信和光通信的
The lack of a suitable substrate limits the development and commercialization of GaN devices. Now Technologies and Devices International (TDI) of the United States has developed a 4-in. Diameter AlN-based semi-insulating substrate for the first block nitrides. This new product is used as a substrate for ultra-fast power AlGaN / GaN devices. These devices include HEMTs and for next-generation wireless and optical communications