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在 ELO/SOI膜上制备出了短沟道 MOSFET.电子及空穴场效应迁移率分别为 360 cm~2/V.s及 200 cm~2/V.S.PMOS及 NMOS晶体管的亚阈值斜率分别为 190mV/dec和 220mV/dec,漏泄电流为10~(-10)A/μm数量级.本文讨论了 SOI-MOSFET的器件特性.
Short-channel MOSFETs were fabricated on ELO / SOI films with subthreshold slopes of 360 m 2 / Vs and 200 cm -2 / VSPMOS and NMOS transistors of 190 mV / dec And 220mV / dec, the leakage current is on the order of 10 ~ (-10) A / μm.This article discusses the device characteristics of the SOI-MOSFET.