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讨论了汞注入碲镉汞光电二极管的频率响应。本分析鉴定了对快速激光脉冲的响应和二极管散粒噪声频谱的3分贝下降,说明了在考虑注入层表面电阻时,需采用一分布参数等效电路模型。事实上,证明了频率特性与集总标准等效电路为基础的简单p-n结模型不相符。根据这一事实,显然能够解释和以前报告的反常现象,并到得了设计和制造快速探测器有用建议。
The frequency response of HgCdTe photodiodes is discussed. This analysis identified a 3 dB drop in the response to fast laser pulses and the diode shot noise spectrum, indicating that a distributed parametric equivalent circuit model is required when considering the surface resistance of the implanted layer. In fact, it is proved that the frequency characteristics do not agree with the simple p-n junction model based on the lumped standard equivalent circuit. Based on this fact, it is clear that the previously reported anomaly can be explained and that useful suggestions have been made for designing and manufacturing rapid detectors.