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金属有机化合物化学气相沉积(MOCVD)系统是制备GaN等半导体薄膜材料和激光器、LED等光电子器件的主要手段,制备出的材料和器件的品质直接依赖于MOCVD系统。本文基于有限体积法,利用商业软件Fluent对自行设计的一种MOCVD反应室内的温度分布和流场进行数值模拟。希望通过对模拟流场品质的细致分析,对MOCVD反应室的设计和优化起到指导与参考作用。
Metalorganic chemical vapor deposition (MOCVD) system is the main method for preparing semiconductor thin film materials such as GaN and optoelectronic devices such as lasers and LEDs. The quality of the prepared materials and devices is directly dependent on the MOCVD system. In this paper, based on the finite volume method, the commercial software Fluent is used to numerically simulate the temperature distribution and flow field in a MOCVD reaction chamber designed by ourselves. It is hoped that through the careful analysis of the simulated flow field quality, it will play a guiding and reference role in the design and optimization of MOCVD reaction chamber.