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阐述了利用离子束刻蚀技术制作微光学阵列元件的工艺条件.研究和实验结果表明,通过光刻热熔法制作的光致抗蚀剂掩模图形经具有不同能量的离子束刻蚀后可以有效地实现向衬底材料上所作的选择性转移,所作的理论分析结果为非球面微光学阵列元件的制作提供了一条可行的技术途径.
The process conditions for fabrication of micro-optical array elements by ion beam etching are described. Research and experimental results show that the photoresist mask pattern produced by photolithography and hot-melt method can be selectively transferred to the substrate material after ion beam etching with different energies. The theory The analysis results provide a feasible technical approach for the fabrication of aspheric micro-optical array elements.