采用真空镀膜技术在石英基板上制备了纯As2S8以及掺杂As2S8平面波导,通过棱镜耦合技术观察了光阻断效应。结合S和As的外层电子构型,分析了样品内部的化学键结构,利用电子能带结构理论和杂化轨道理论,建立了光阻断效应的动力学方程,并对切断过程进行了数值分析,分析结果与实验数据十分符合,得出该模型能很好地解释光阻断效应的实验现象,并揭示了光阻断效应切断过程的内在机理。 Pure As2S8 and As2S8 planar waveguide were prepared on quartz substrate by vacuum deposition technique. The light blocking effect was observed by prism coupling technology. Combined with the electronic configuration of the outer layer of S and As, the chemical bond structure inside the sample was analyzed. Based on the electronic band structure theory and the hybrid orbital theory, the kinetic equation of the light blocking effect was established and the numerical analysis of the cutting process was carried out The results are in good agreement with the experimental data. It is concluded that this model can well explain the experimental phenomena of light blocking effect and reveal the intrinsic mechanism of light blocking effect.