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制造了一个改进的增强型GaAs MESFET,其中采用了减小源和漏寄生电阻的高剂量Si离子注入,以及用于控制阈电压和减小肖特基栅界面状态的Pt埋栅结构。获得的1μm栅长增强型GaAs MESFET的跨导为250mS/mm。
An improved enhanced GaAs MESFET was fabricated using high dose Si ion implantation to reduce parasitic source and drain parasitics and Pt buried gate structures to control threshold voltage and reduce Schottky interface states. The transconductance of the obtained 1 μm gate-length-enhanced GaAs MESFET was 250 mS / mm.