以现在应用较广泛的电子器件-MOS器件在电磁环境中的失效建模为例,针对MOS器件受到电磁脉冲和周期脉冲的冲击后,所表现出来的失效特征,得出它符合基于随机过程的退化失效模型所描述的结论。根据结论和两种电应力的特点,分别提出基于随机过程的失效建模和动态应力-强度干涉建模。通过模型的建立和分析,初步制定出电子器件失效的试验方案。 Taking the failure mode of the MOS-based device now widely used in the electromagnetic environment as an example, according to the failure characteristics of the MOS device after being impacted by the electromagnetic pulse and the periodic pulse, it is found that it meets the requirements of random process Degenerate failure models describe the conclusions. According to the conclusion and the characteristics of the two kinds of electric stress, failure modeling and dynamic stress-strength interference modeling based on stochastic process are respectively proposed. Through the establishment and analysis of the model, the tentative scheme of the failure of electronic devices was initially worked out.