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用能量为1.5MeV,剂量为1.8×101 8e/cm2的电子束辐照直拉硅单晶样品,通过傅里叶变换红外光谱技术(FTIS)研究了辐照后样品中VO2缺陷随退火温度的变化及其热稳定性。实验结果表明,辐照在样品中引入了VO2的亚稳态缺陷,其特征吸收峰在低温红外光谱中向高频方向移动,300℃热处理时该亚稳态缺陷转化为VO缺陷;400℃热处理样品中出现了VO2的稳态缺陷,450℃热处理该稳态缺陷的峰值强度达到最大,当退火温度达到550℃时,该稳态缺陷完全消失并转化为其它复杂的缺陷。这种稳态的VO2缺陷经历450℃长时间热处理表现出良好的热稳定性,而在500℃短时热处理后转化为其它缺陷。
The Czochralski silicon single crystal samples were irradiated by 1.5MeV electron beam at a dose of 1.8 × 1018e / cm2. The VO2 defects in irradiated samples were investigated by Fourier Transform Infrared Spectroscopy (FTIS) Change and its thermal stability. The experimental results show that the irradiation introduces a metastable defect of VO2 in the sample, and the characteristic absorption peak shifts to high frequency in the low-temperature infrared spectrum. When the sample is heated at 300 ℃, the metastable defect is transformed into the VO defect. The heat treatment at 400 ℃ The steady state defect of VO2 appeared in the sample. The peak intensity of the steady state defect reached the maximum at 450 ℃. When the annealing temperature reached 550 ℃, the steady state defect completely disappeared and transformed into other complicated defects. This steady-state VO2 defect shows good thermal stability after heat treatment at 450 ° C for a long time, and transforms to other defects after short-time heat treatment at 500 ° C.