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CeO_2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current (DC) magnetron reactive sputtering.The effect of deposition temperature on epitaxial orientation of CeO_2 thin films was examined.High quality CeO_2 layers were achieved at deposition temperature from 750℃to 850℃. Subsequently yttria-stabilized zirconia (YSZ) and CeO_2 films were deposited to complete the buffer layer structure via the same process.The best samples exhibited a highly biaxial texture,as indicated by FWHM (full width half maximum) values in the range of 4°-5°,and 2°-4°for in-plane and out-of-plane orientations, respectively.Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion.Atomic force microscope observations revealed a smooth,dense and crack-free surface morphology,which provided themselves as the good buffer structure to the YBa_2Cu_3O_(7-δ) (YBCO) coated conductors.
CeO 2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current (DC) magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO 2 thin films was examined. High quality CeO 2 layers were achieved at deposition temperature from 750 ° C to 850 ° C. The best samples exhibited a highly biaxial texture, as indicated by FWHM (full width half maximum) values in the range of 4 ° -5 °, and 2 ° -4 ° for in-plane and out-of-plane orientations, respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force Microscopic observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa_2Cu_3O_ (7-δ) (YBCO) coated conductors.