近日,国家重大科技成果转化及山东省重点建设项目——山东天岳先进材料科技有限公司功能器材用碳化硅衬底项目顺利完工,标志着我国建成亚洲规模最大的宽禁带碳化硅半导体材料生产基地。据悉,宽禁带碳化硅半导体材料是第三代半导体核心材料,目前正在逐步取代硅(Si)晶等传统材料,成为新一代高端半导体行业的主要生产材料。宽禁带碳化硅半导体材料广泛应用于半导体电力电子器件、微波器件、光电子器件 Recently, the successful transformation of national major scientific and technological achievements and Shandong Province’s key construction project - Shandong Tianyue Advanced Materials Technology Co., Ltd. silicon carbide substrate project for functional equipment was successfully completed, marking the completion of China’s largest production of wide band gap silicon carbide semiconductor materials in Asia base. It is reported that wide band gap silicon carbide semiconductor material is the third generation of semiconductor core materials, is currently gradually replacing the silicon (Si) crystal and other traditional materials, becoming a new generation of high-end semiconductor industry’s main production materials. Wide bandgap silicon carbide semiconductor materials are widely used in semiconductor power electronics, microwave devices, optoelectronic devices