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本文对场效应晶体管工作在低频和高频时的交扰调制在理论和实验两方面进行了研究。研究表明目前的大信号模型对于预示场效应晶体管的交扰调制都是不适宜的。本文指出,交扰调制的特性能够通过场效应晶样管所测得的低频特性,用冪级数近似表示法精确地预示出来。典型的场效应晶体管的交扰调制当频率约为100兆赫以下时,实质上是与频率无关的。本文提出了场效应晶体管的大信号模型,以便在非常高的频率工作时预示交扰调制及其有关现象。基于这一模型的交扰计算机预示与实验测量的结果完全一致。
In this paper, the field-effect transistor work in the low-frequency and high-frequency crosstalk modulation in both theoretical and experimental studies. Research shows that the current large-signal model is not suitable for predicting the cross-talk modulation of field-effect transistors. This paper points out that the characteristics of crosstalk modulation can be precisely predicted by the approximation of the power series from the low-frequency characteristics measured by a field effect transistor. Cross-talk modulation of a typical field-effect transistor is essentially frequency-independent at frequencies below about 100 MHz. This paper presents a large-signal model of a field-effect transistor to indicate the modulation of the crosstalk and its related phenomena when operating at very high frequencies. The crosstalk computer prediction based on this model is completely consistent with the experimental measurement.