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为研究混合量子点(QD)发光二极管(QLED)的性能,利用红、绿量子点混合作为发光层,制备了结构为ITO/PEDOT:PSS/poly-TPD/QDs(红、绿1∶1混合)/ZnO/Al的橙光QLED,并与结构为ITO/PEDOT:PSS/poly-TPD/QDs(红光)/ZnO/Al的红光QLED进行了对比。实验结果表明,基于红、绿QD混合的橙光QLED的制备方法是有效的,制备的橙光QLED电流密度和亮度均小于红光QLED,但电流效率远大于红光QLED。研究发现,器件性能与各功能层能级以及厚度密切相关,应通过选取适当能级的发光层材料,将注入的空穴以及电子同时限制在发光层内从而提高器件的电流效率,并调节各功能层厚度使得载流子注入平衡从而提高器件性能。
In order to study the performance of hybrid quantum dot (QD) light-emitting diode (QLED), ITO / PEDOT: PSS / poly-TPD / QDs ) / ZnO / Al orange QLED was compared with a red QLED of the structure ITO / PEDOT: PSS / poly-TPD / QDs (red) / ZnO / Al. The experimental results show that the preparation method of orange light QLED based on red and green QD mixing is effective. The current density and brightness of prepared orange light QLED are less than that of red QLED, but the current efficiency is far greater than that of red QLED. It is found that device performance is closely related to the energy level and thickness of each functional layer. The luminescence layer material of the appropriate energy level should be selected to limit the injected holes and electrons in the light-emitting layer at the same time to improve the current efficiency of the device. The thickness of the functional layer allows carrier injection to be balanced to improve device performance.