研究钽硅介质薄膜,有两个目的:(1)用同一薄膜材料制成阻容元件,简化薄膜电路的制造工艺;(2)改进钽基介质薄膜的性能。 对钽硅电阻薄膜研究表明:其电性与Ta_2N膜类似,但稳定性却优于Ta_2N电阻薄膜。本文的研究结果表明,钽硅氧化物薄膜中Si含量在20～50at％范围内,其介电 Research tantalum silicon dielectric thin film has two purposes: (1) the same film material made of RC components to simplify the manufacturing process of the thin film circuit; (2) tantalum-based dielectric film to improve performance. The research on the tantalum silicon resistance film shows that its electrical properties are similar to that of Ta_2N film, but its stability is better than Ta_2N resistance film. The results of this study show that the tantalum silicon oxide film in the Si content of 20 ~ 50at% range, the dielectric